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Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

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【作者】 张旭辉马斌张宗芝金庆原

【Author】 Zhang Xu-Hui, Ma Bin, Zhang Zong-Zhi, and Jin Qing-Yuan Key Lab of Advanced Photonic Materials and Devices, Laboratory of Advanced Materials and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China

【机构】 Key Lab of Advanced Photonic Materials and Devices, Laboratory of Advanced Materials and Department of Optical Science and Engineering, Fudan University

【摘要】 Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic τ-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of non-ferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.

【Abstract】 Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic τ-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of non-ferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.

【关键词】 L10τ–MnAlbuffer layer
【Key words】 L10τ–MnAlbuffer layer
【基金】 Project supported by the National Natural Science Foundation of China (Grant Nos. 60490290, 60678008, 10604016, 50771032,and 50771033);the National Basic Research Program of China (Grant No. 2009CB929201)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2010年10期
  • 【分类号】O484.43
  • 【下载频次】22
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