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Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

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【作者】 龙浩方浩齐胜利桑丽雯曹文彧颜建邓俊静杨志坚张国义

【Author】 Long Hao, Fang Hao, Qi Sheng-Li, Sang Li-Wen, Cao Wen-Yu, Yan Jian, Deng Jun-Jing, Yang Zhi-Jian, and Zhang Guo-Yi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

【机构】 State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University

【摘要】 This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours’ current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensi- ties under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode.

【Abstract】 This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours’ current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensi- ties under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode.

【基金】 Project supported by the National Natural Science Foundation of China (Grant Nos. 60990314, 60976009, 60577146, U0834001);the National Key Basic Research and Development Project (973) of China (Grant No. 2007CB307004)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2010年10期
  • 【分类号】TN312.8
  • 【下载频次】20
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