This paper investigates the thermal activation behaviour of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height by numerical simulation. The analytical Gaussian distribution model predicted that the I-V -T curves may intersect with the possibility of the negative thermal activation of current, but may be contradictory to the thermionic emission mechanism in a Schottky diode. It shows that the cause of the unphysical phenomenon is related to the incorrect calculation of ...
【英文摘要】
This paper investigates the thermal activation behaviour of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height by numerical simulation. The analytical Gaussian distribution model predicted that the I-V -T curves may intersect with the possibility of the negative thermal activation of current, but may be contradictory to the thermionic emission mechanism in a Schottky diode. It shows that the cause of the unphysical phenomenon is related to the incorrect calculation of ...
【基金】
supported by Shanghai-Applied Materials Research and Development Fund (Grant Nos.07SA06 and 09700714200);
Fok Ying Tong Education Foundation (Grant No.114006)
【更新日期】
2012-09-17
【分类号】
TN311.7
【正文快照】
1. Introduction Current transport mechanism in a Schottky diode has been a subject for a long history. Tradition- ally Schottky barrier height (SBH) was considered to be uniform across the entire interface and thermionic emission (TE) theory was applied t
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