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Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

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【作者】 侯志灵； 曹茂盛； 袁杰； 宋维力；

【Author】 Hou Zhi-Ling a)b) , Cao Mao-Sheng a), Yuan Jiec), and Song Wei-Li a) a) School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China b) School of Science, Beijing University of Chemical Technology, Beijing 100029, China c) School of Information Engineering, Central University for Nationalities, Beijing 100081, China

【机构】 School of Materials Science and Engineering,Beijing Institute of Technology； School of Science,Beijing University of Chemical Technology； School of Information Engineering,Central University for Nationalities；

【摘要】 This paper reports that single-phase γ-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400℃ in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

【Abstract】 This paper reports that single-phase γ-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400℃ in the range of 7.3–18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

【关键词】 γ-Y2Si2O7； dielectric properties； structural relaxation polarization； low dielectric loss；
【Key words】 γ-Y2Si2O7； dielectric properties； structural relaxation polarization； low dielectric loss；
【基金】 Project supported by the National Natural Science Foundation of China (Grant No. 50872159);the National Defense Pre-research Foundation of China (Grant Nos. 513180303 and A2220061080)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2010年01期
  • 【分类号】O482.4
  • 【被引频次】2
  • 【下载频次】56
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