【摘要】 采用加入硅硼玻璃相的溶胶-凝胶(Sol-Gol)技术,以无机物为原料,在低温下成功制备了Pt/Ti/Si O2/Si衬底上Bi3.15La0.75Ti3O12(BLT)铁电薄膜。XRD、AFM分析及电学性能的测试结果表明,600～650℃退火处理的加入硅硼玻璃相BLT铁电薄膜具有单一的层状钙钛矿结构;薄膜表面平整无裂纹、致密,薄膜为多晶生长;其剩余极化强度(2Pr)为27.09μC/cm2,矫顽场Ec约为53.1 kV/cm;室温下,在测试频率为1 MHz,经1.0×1011极化反转后,剩余极化值下降约10%,具有良好的抗疲劳特性;薄膜的漏电流密度低于9×10-10A/cm2。玻璃相提高了薄膜的致密度和抗疲劳特性,降低了薄膜的漏电流密度,对剩余极化强度影响有限。更多还原

【Abstract】 The Bi3.15La0.75Ti3O12(BLT) doped(Si,B) glass phase ferroelectric films by Sol-Gel method were deposited on Pt(111)/Ti/SiO2/Si substrates.X-ray diffraction(XRD) and atom microscopy(AEM) were used to identify the crystal structure and surface morphology of the BLT doped(Si,B) glass phase ferroelectric films.The electric properties of the BLT doped(Si,B) glass phase ferroelectric films were studied.The result showed that the BLT films exhibited a polycrystalline structure with a bismuth-layered structure and the specular crack-free,after annealing at 600～650 ℃.The BLT doped(Si,B) glass phase ferroelectric film capacitor with a top Pt electrode showed a large remnant polarization(2Pr) of 27.09 μC/cm2,coercive field(Ec) of 53.1 kV/cm.Through 1.0×1011 of polarization inversion,the remaining polarization value has been decreased by a factor of 10% at a frequency of 1 MHz at room temperature,and exhibited good fatigue-free behavior.The BLT thin films showed good insulating behavior according to the test of leakage current density(<9×10-10 A/cm2).The(Si,B) glass phase improved the surface morphology,fatigue-free behavior and the leakage current density of the BLT films.更多还原