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气压和偏流对高掺硼金刚石晶体性质的影响(英文)

The influence of gas pressure and bias current on the crystallinity of highly boron-doped diamond films

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【作者】 贾福超白亦真屈芳孙剑赵纪军姜辛

【Author】 JIA Fu-chao1,2,BAI Yi-zhen1,2,QU Fang1,2,SUN Jian1,2,ZHAO Ji-jun1,2,JIANG Xin3(1. School of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian116024,China;2. Key Laboratory of Materials Modification by Laser,Ion and Electron Beams,Ministry of Education,Dalian University of Technology,Dalian116024,China;3. Institute of Materials Engineering,University of Siegen,Paul-Bonatz-Straβe 9-11,D-57076 Siegen,Germany)

【机构】 大连理工大学物理与光电工程学院大连理工大学三束材料改性教育部重点实验室锡根大学材料工程研究所

【摘要】 采用热丝化学气相沉积法,改变工作气压和偏流,在硅基片上沉积了高掺硼金刚石膜。利用扫描电镜(SEM)、拉曼光谱和X射线衍射仪对沉积的金刚石膜表面形貌和结构进行表征。结果显示:当气体压强从3kPa降低到1.5kPa时,金刚石膜有较平的表面形貌和和较好的晶形,薄膜的晶体性质得到良好的改善。但是继续降气体压强,从1.5kPa到0.5kPa时,却呈现出相反的趋势。固定气体压强(1.5kPa),改变偏流,结果表明:适当的偏流(3A)可以改善掺硼金刚石的质量,偏流较高会导致薄膜中非金刚石相增多。

【Abstract】 Highly boron-doped diamond(BDD)films were deposited by hot filament chemical vapor deposition on a silicon substrate with different gas pressures and bias currents.The surface morphology and the structure of the diamond films were analyzed by scanning electron microscopy,Raman spectroscopy,and X-ray diffraction.Results indicated that the quality of the highly BDD films tended to be improved when the gas pressure decreased from 3 to 1.5kPa,whereas they showed an opposite trend with a further decrease of the gas pressure from 1.5 to 0.5 kPa.An appropriate bias current(3A)was favorable in improving the qualities of the diamond films and a higher bias current led to an increase of the non-diamond phase in the films.

【基金】 supported by the 973 Program(Grant No.2008CB617614)~~
  • 【文献出处】 新型炭材料 ,New Carbon Materials , 编辑部邮箱 ,2010年05期
  • 【分类号】TQ164
  • 【被引频次】3
  • 【下载频次】82
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