【摘要】 由单电子晶体管(single-electron transistor,简称SET)构成的存储器具有体积小、容量大、功率消耗低等优点,可望成为继CMOS存储器之后纳米级的新型存储器。本文介绍了几种基于单电子晶体管的存储单元结构,并以单电子陷阱存储单元为例,提出了一个存储器参数优化选择的计算方法,能够改进器件的工作可靠性。利用SIMON仿真器还对这些单电子存储器进行了比较研究。更多还原

【Abstract】 With smaller size,lower power consumption and larger storage,single-electron-transistor (SET) based memories are expected to outperform their CMOS counterparts. This paper introduces the structures of several SET-based single-electron memory cells,and presents a design methodology for electron-trap memory cell,in particular,with parameter optimization towards its reliability improvement. A comparative study of these memories is also conducted with simulation results using SIMON simulator.更多还原