节点文献
S波段88W SiC MESFET推挽放大器研究
Study on S-Band 88W SiC MESFETs Push-Pull Amplifier
【摘要】 采用管壳内预匹配及外电路匹配相结合的方法,制作成功S波段高增益、高效率、大功率SiC MESFET推挽放大器。采用预匹配技术提高了器件输入、输出阻抗,优化了测试电路结构,成功消除了输入信号对栅极偏置电压的影响,提高了电路稳定性。放大器在脉宽为300μs、占空比为10%脉冲测试时,频率2GHz,Vds=50V脉冲输出峰值功率为88.7W(49.5dBm),功率增益为8.1dB,峰值功率附加效率为30.4%。
【Abstract】 A high gain,high efficiency and high power SiC MESFETs amplifier with internal pre-matched and external matched circuits is developed.The input and output impendences are increased by using the pre-matched circuits.The test circuit was optimized to eliminate the effect on the Vgs from the input signal.The amplifier showed a peak output power of 88.7W(49.5dBm)with a large signal gain of 8.1 dB and a power added efficiency of 30.4% at 2GHz,Vds=50V,300μs pulse width and 10% duty cycle.
- 【文献出处】 微波学报 ,Journal of Microwaves , 编辑部邮箱 ,2010年02期
- 【分类号】TN722
- 【被引频次】4
- 【下载频次】129