【摘要】 用微波电子回旋共振化学气相沉积(MWECR CVD)系统制备了具有非晶/微晶两相结构的硅薄膜,研究了沉积温度和沉积压力等对制备微晶硅薄膜的结构和电学特性的影响。结果表明:较低的反应压和较高的衬底温度有利于获得非晶/微晶两相结构的硅薄膜,当反应压为0.7 Pa、衬底温度为170℃时,得到非晶/微晶两相结构的硅薄膜晶相体积比约为30%;具有这种晶相体积比的非晶/微晶两相结构的硅薄膜,μτ乘积值约为10-5量级左右,比不含微晶成分的氢化非晶硅样品的μτ乘积值大约2个量级,同时这种晶相体积比的非晶/微晶两相结构的硅薄膜的光敏性在103～104左右,其兼具很好的光电导稳定性和优良的光电特性,是制备非晶硅太阳电池的器件级本征层材料。更多还原

【Abstract】 The microcrystalline silicon films in the phase transition regime from amorphous to microcrystalline were fabricated by microwave electron-cyclotron-resonance chemical vapor deposition(MWECR CVD) system.The influence of deposition temperature and deposition pressure on the structure and electrical properties of microcrystalline silicon films was investigated.It is shown that the films in the phase transition regime are easier to fabricate under the condition of lower deposition pressure and higher substrate temperature.For example,the films in the phase transition regime whose crystalline volume fraction is about 30%,were deposited at substrate temperature of 170℃ and deposition pressure of 0.7Pa.The films μτ product is about the order of magnitude of 10-5,whose magnitude is two order higher than that of amorphous silicon films,and their photo sensitivity is about 103～104.Therefore,having both high stability and excellent optoelectric properties of the high-quality and device grade film,it is suitable to fabricate the intrinsic materials for amorphous silicon based solar cells.更多还原