【摘要】 利用ArF准分子激光对非晶硅薄膜的表层进行晶化后,采用拉曼光谱(Raman)、透射电镜(TEM)、场发射扫描电子显微镜(FE-SEM)等实验方法研究不同激光能量密度下晶化层硅薄膜微结构变化。实验结果表明:随激光能量密度的增大,薄膜结晶度增大,晶化层厚度加厚;晶粒尺寸则是先增大,直到激光能量密度增大到210 mJ/cm~2后,晶粒尺寸开始减小并且均匀性逐渐变差。最佳的激光能量密度范围为120～180 mJ/cm~2,这时薄膜表面晶化层晶粒比较均匀致密,薄膜质量较好。更多还原

【Abstract】 ArF excimer laser is used to crystallize the surface layer of a-Si thin film.The microstructure variation under different laser fiuences is investigated using Raman spectrum, transmission electron microscopy ( TEM ) , and field emission-scanning electron microscopy ( FE- SEM).The results indicate that the ciystallinity and the thickness of the crystallized surface films increase with laser fluences.The grain size increases with laser fluences below 210 mJ/cm~2 and decreases with homogeneity deteriorating above.The best crystallized surface layer with homogeneous grain size is found to be with the laser fluence in 120～180 mJ/cm~2.更多还原