【摘要】 利用n型氧化锌和p型硫化亚锡制备ITO/ZnO/SnS/Al结构的pn结太阳能电池.首先采用射频磁控溅射法在ITO衬底上制备ZnO薄膜,再用真空蒸发镀膜法沉积SnS薄膜以形成异质结,并利用X射线衍射(X-raydiffraction,XRD)光谱、透射光谱和I-V曲线来表征薄膜和器件的性能.讨论在不同溅射功率和工作气压下制备的ZnO薄膜对光吸收情况和所形成异质结器件的影响,测量不同沉积时间制备的ZnO薄膜相应的器件的开路电压、短路电流密度和填充因子.结果表明,当工作气压和溅射功率分别为0.2 Pa和150 W,沉积时间为40 min时得到的ZnO薄膜能获得较好的异质结且器件的性能达到最优化.该最优器件的短路电流密度JSC为1.38 mA.cm-2,开路电压V为0.42 V,填充因子F为0.40.更多还原

【Abstract】 The n type ZnO and p type SnS were used to prepare solar cells with the structure of ITO/ZnO/SnS/Al.The n-ZnO thin films were first obtained on the ITO substrate by using RF magnetron sputtering with different working pressures and sputtering powers.The p-SnS thin films were then deposited on the n-ZnO layers by vacuum evaporation.Qualities of ZnO thin films were analyzed with an ultraviolet visible spectrophotometer(UI/VIS) and the properties of heterojunctions were measured with X-ray diffraction(XRD).The photoelectric properties of SnS/ZnO heterojunction solar cells were characterized with I-V curves.As a result,a better solar cell was prepared with the fabrication of n-ZnO under 0.2 Pa working pressure,150 W sputtering power and 40 min depositing time.The cell parameters are: JSC=1.38 mA·cm-2,VOC=0.42 V,FF=0.40.更多还原