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6H-SiC表面热氧化SiO₂的正电子谱研究

A PAS study on the thermally oxidated SiO₂ film on 6H-SiC

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【Author】 YUAN Jing~1, GONG Min~1, WANG Hai-Yun~2, WENG Hui-Min~2 (1.Key Lab of Microelectronics of Sichuan of Province, School of Physical Science and Technology, Sichuan University, Chengdu 610064, China; 2.Department of Modern Physics, University of Science and Technology of China, Hefei 230026)

【机构】四川大学物理科学与技术学院微电子技术四川省重点实验室；中国科技大学近代物理系；

【摘要】本文将慢正电子湮灭多普勒展宽谱技术,应用于对SiC表面热氧化生长的SiO₂特性的研究.S参数和W参数在退火前后的变化,直观的反映出SiO₂/SiC表面氧化层中空位型缺陷浓度的改变.通过与SiO₂/Si样品的对比,证实C元素及其诱生空位型缺陷的存在,很可能是影响SiO₂/SiC氧化层质量和SiC MOS击穿特性的重要因素,后退火工艺可以提高SiO₂/SiC中氧化层的致密性.实验表明,慢正电子湮灭多普勒展宽谱是研究热氧化SiO₂特性的有效手段.更多还原

【Abstract】 In this article,positron annihilation Doppler-spread-spectroscopy was used to study the SiO₂ film by thermal oxidation on 6H-SiC.The change of both S parameter and W parameter before and after annealing could show the void-like defects in SiO₂ on SiC.Compared with SiO₂/Si,the existence of carbon atoms and void-like defects in SiO₂ might be the reasons of low breakdown voltage of SiO₂/SiC MOS structure.The experiments indicated that,post-annealing processing could improve the quality of the SiO₂ layer.It was also indicated that positron annihilation Doppler-spread-spectroscopy was very useful to study the SiO₂ film by thermal oxidation.更多还原