【摘要】 以高纯(6N)Cd、Ge、As单质,按CdGeAs2化学计量比配料,应用传统工艺合成出砷锗镉(CdGeAs2)多晶材料。采用Rietveld法,对合成的CdGeAs2多晶粉末进行了X射线衍射分析及其全谱拟合精修,发现合成材料中含有微量Cd2GeAs4杂相,讨论了Cd2GeAs4产生的原因。为了消除微量杂相,设计出高温熔体机械和温度振荡相结合的方法,并采用新方法成功地合成出高纯单相的CdGeAs2多晶材料。更多还原

【Abstract】 CdGeAs2 polycrystalline material was synthesized by high-purity (6N) Cd,Ge,and As elements as raw materials according to stoichiometry of CdGeAs2. The polycrystalline powder was characterized by XRD and the pattern was used to whole pattern fitting refinement by Rietveld method. Micro-impurity phase Cd2GeAs4 was found in the synthesized polycrystalline material. The reason of generation on micro-phase Cd2GeAs4 was discussed. In order to eliminate micro-impurity phase Cd2GeAs4,a new synthesis method was designed out,i.e. combinatorial method with mechanical and temperature oscillation.CdGeAs2 polycrystalline material with high pure and single phase were synthesized by the new synthesis method.更多还原