【摘要】 采用热丝CVD法在单晶Si衬底上进行了Si和Ge薄膜的低温外延生长,用XRD和Raman谱对其结构性能进行了分析。结果表明:在衬底温度200℃时,Si(111)单晶衬底上外延生长出了Raman峰位置为521.0cm-1;X射线半峰宽(FWHM)为5.04cm-1。结晶质量非常接近于体单晶的(111)取向的本征Si薄膜;在衬底温度为300℃时,在Si(100)单晶衬底上异质外延,得到了Raman峰位置为300.3cm-1的Ge薄膜,Ge薄膜的晶体取向为Ge(220)。研究表明热丝CVD是一种很好的低温外延薄膜的方法。更多还原

【Abstract】 Epitaxial growth of Si and Ge films on c-Si substrate was carried out by hot-wire CVD (HWCVD) at low substrate temperature.XRD and Raman spectroscopy were used to analyze the structural properties of the films.It was found that a high quality homoepitaxial Si film is obtained on Si(111) substrate at 200 ℃.The peak position of the Raman spectrum for the film is at 521.0 cm-1 and the full width at half maximum (FWHM) is 5.04 cm-1,almost the same as those for the Si(111) substrate.Heteroepitaxial Ge film is performed on Si(100) at 300 ℃.The Ge film is Ge(220) preferably orientated and the Raman peak position for this film is at 300.3 cm-1.All results indicate that HWCVD is an excellent method for film epitaxy at low temperature.更多还原