节点文献

基于溶胶凝胶法ITO薄膜材料的制备与表征

Preparation and superficial characteristics of ITO films by sol-gel

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 宣鑫科陶佰睿张健

【Author】 XUAN Xin-ke,TAO Bai-rui,ZHANG Jian(School of Information,East China Normal University,Shanghai 200062,China)

【机构】 华东师范大学信息学院

【摘要】 基于溶胶凝胶法制备了掺铟二氧化锡(ITO)薄膜,探讨聚乙二醇(PEG)、退火温度、退火过程氧气浓度等因素对ITO薄膜性能的影响。实验结果表明:在相同实验条件下,添加PEG能够降低ITO薄膜表面粗糙度,退火温度会改变ITO薄膜的结晶度,提高含锡量和氧浓度会增加ITO薄膜的电阻率。本研究为ITO埋栅结构气敏传感器制备提供了实验基础。

【Abstract】 Indium tin oxide(ITO) thin films were deposited on oxidized silicon substrates by sol-gel process.The basic characteristics of ITO thin films with/without PEG additive was investigated in the environment with different temperature and oxygen concentration.The result showed that the ITO thin films with PEG had a better surface roughness as the effect of the annealing conditions mentioned.The annealing temperature will change the crystallinity of ITO films.Increasing the amount of tin and oxygen concentration will increase the resistivity of ITO film.The result obtained can be used as a sensing material for a promising gas sensor.

  • 【文献出处】 齐齐哈尔大学学报(自然科学版) ,Journal of Qiqihar University(Natural Science Edition) , 编辑部邮箱 ,2010年03期
  • 【分类号】TB383.2
  • 【被引频次】3
  • 【下载频次】516
节点文献中: 

本文链接的文献网络图示:

本文的引文网络