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介孔硅基WO3纳米颗粒薄膜室温气敏元件特性(英文)
Meso-Porous Silicon-Based WO3 Nano-Particle Film Gas Sensor Operating at Room Temperature
【摘要】 采用双槽电化学腐蚀法在p+单晶硅片表面制备介孔硅层(meso-PSlayer),然后用对向靶磁控反应溅射法在介孔硅表面沉积WO3纳米颗粒薄膜,在干燥空气中于400℃下保温4h进行退火热处理,制备出介孔硅基WO3纳米颗粒薄膜(WO3-PS)室温气敏元件.利用扫描电子显微镜(SEM)分析介孔硅层及WO3-PS的表面形貌,通过X射线衍射(XRD)研究WO3的结晶状态,测试WO3-PS气敏元件在室温下对NO2、NH3的气敏性能,并探讨了WO3-PS气敏元件的工作机理.实验结果表明,在介孔硅表面沉积WO3纳米颗粒薄膜可使介孔硅的气敏性能显著提高,其中在室温下对10×10-6NO2的灵敏度由5提高至56,大大提高了介孔硅的灵敏度,并降低了其响应/恢复时间,提高了对NO2的选择性.
【Abstract】 Meso-porous silicon(meso-PS)layers were fabricated by electrochemical dissolution in a double-tank cell on the surface of the single-crystalline p+-type silicon.Then,WO3 nano-particle films were deposited on meso-PS layers by dc facing target reactive magnetron sputtering method.After deposition,the samples were annealed in dry air at 400 ℃ for 4 h.The meso-porous silicon-based WO3 nano-particle film(WO3-PS)gas sensors were fabricated.The surface morphologies of meso-PS layers and WO3-PS films were characterized by scanning electron microscope(SEM).The crystallization was studied by X-ray diffraction(XRD).Also the NO2 and NH3 gas-sensing properties of WO3-PS gas sensor were thoroughly measured at room temperature.It can be concluded that meso-PS gas sensors presents much higher sensitivity after deposited with WO3 nano-particle film.The gas sensitivity to 10×10-6 NO2 at room temperature can reach 56 from 5;meanwhile,the WO3-PS gas sensors show quicker response time and higher selectivity to NO2 than meso-PS gas sensors.
【Key words】 meso-porous silicon; WO3 nano-particle film; room temperature; gas-sensing property;
- 【文献出处】 纳米技术与精密工程 ,Nanotechnology and Precision Engineering , 编辑部邮箱 ,2010年02期
- 【分类号】TP212
- 【被引频次】4
- 【下载频次】238