【摘要】 用热蒸发技术在玻璃基片上沉积一层Sn薄膜,在真空条件下,将其在150~300℃下硫化30~60 min.对在不同温度和时间下硫化的薄膜进行结构、成分和表面形貌分析,结果表明:在不同温度和不同时间下硫化,所得到的薄膜在物相结构、成分和表面形貌上都存在差异.当硫化温度为240℃、硫化时间为45 min时,所制得的薄膜为正交结构的SnS多晶薄膜,其均匀性、致密性以及对基片的附着力都较好,具有(111)方向优先生长,薄膜粒径在200~800 nm,且晶格常数与标样的数值吻合很好.更多还原

【Abstract】 SnxSy thin films had been prepared by a two-step process.This process included the deposition of Sn thin films on glass substrates by thermal evaporation and sulphurization of Sn thin films for 30~60 min in a vacuum condition at different temperatures of 150~300 ℃.Their microstructures,composition and morphology at different sulphurization temperatures and time were analyzed.The results showed:there were some differences in phase structure,composition and morphology for the films synthesized at different sulphurization temperatures and time;the films sulphurized at a temperature of 240 ℃ for 45 min were polycrystalline SnS films with orthorhombic structure.The SnS films had a strong(111) preferred orientation and good adhesion to the substrates.They were uniform and their grain size was about 200~800 nm.The crystal lattice constant of the films was in good agreement with that of the standard sample.更多还原