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用离子束技术研究稀磁半导体和纳米磁性材料

Investigation of diluted magnetic semiconductor and nano magnetic material by ion beam technology

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【作者】 姚淑德丁志博王坤陈迪法涛陈田祥

【Author】 YAO Shude DING Zhibo WANG Kun CHEN Di FA Tao CHEN Tianxiang (State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871,China)

【机构】 北京大学核物理与核技术国家重点实验室

【摘要】 综述用离子束技术研究稀磁半导体和纳米磁性材料的构建、调控和改性的进展和现状。离子束注入是优选的构建和调控方法,测试结果表明在GaN和ZnO等新半导体光电材料中注入Mn、Ni和Co等过渡金属离子可得到低温和室温下的铁磁性。离子束分析技术给出这些新材料薄膜的微结构信息,透射电镜下观察到过饱和剂量Mn+注入GaN形成的纳米磁性颗粒。

【Abstract】 In this paper,we focus on constitution,magnetism modification and characterization of GaN-based materials using ion beam technology and formation of the nano structure by implanting Mn+ or Co+ ion of different doses into the film samples.SQUID and AGM were used to measure the magnetic properties,such as coercivity and saturation magnetization,for the samples before and after annealing,M-H and M-T curves showed ferromagnetism in the films at both low temperature and room temperature.RBS/C,PIXE and XRD were used to analyze the microstructure,content of doping transition metal and damage.The nano-cluster of ferromagnetism particle was observed under HRTEM.

【基金】 国家自然科学基金(10575007,10875004)资助
  • 【分类号】TM271
  • 【被引频次】4
  • 【下载频次】341
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