【摘要】 绝缘体上硅(SOI)材料的激光损伤特性研究对基于该材料的光学器件在激光环境中的应用具有重要价值。本文使用1064 nm脉冲激光对SOI材料进行了辐照实验,在脉冲宽度分别为190 ps和280μs的条件下,测得的损伤阈值能量密度分别为2.5 J/cm2和19.8 J/cm2,SOI材料表面的激光损伤模式也存在明显差别。根据实验结果,利用ANSYS软件的热分析模块,采用有限元方法数值模拟了激光辐照结束后SOI材料内部的温度场分布,并结合损伤形貌的观测对SOI材料的激光损伤机制进行了讨论。更多还原

【Abstract】 Research on laser-induced damage of silicon-on-insulator(SOI) material is quite important for applications of optical devices based on this material.Irradiation experiment is performed on SOI material with 1064 nm pulsed laser.For pulse width of 190 ps and 280 μs,the laser-induced damage threshold values are measured to be 2.5 and 19.8 J/cm2,respectively.Damage patterns induced by the two pulse lasers are also different from each other.According to the experimental results,the temperature distributions in the SOI material after laser pulse duration are simulated by a finite element analysis method with the ANSYS heat analysis module.Based on observation to the damage morphologies,the laser-induced damage mechanism of SOI material is discussed.更多还原