【摘要】 提出一种新的处理方法-XPS标准曲线法来测量硅片上超薄氧化硅层(SiO2/Si)的厚度。该方法利用一系列氧化硅厚度(d)准确已知的SiO2/Si标准样品,分别记录其氧化硅和元素硅的Si(2p)谱线,并得到峰高比(R),然后将厚度(d)对峰高比(R)作图得到标准曲线。在相同的实验条件下,测得未知样品氧化硅和元素硅的Si(2p)谱线并计算其峰高比,通过插入法在标准曲线上得到相应的氧化硅层厚度。SiO2/Si标准样品由设备一流和经验丰富的权威实验室提供,其氧化硅厚度采用多种方法进行测量比对。实验表明:基于氧化硅厚度准确知道的标准样品制作的XPS标准曲线,用于硅片上超薄氧化硅层厚度测量时具有快速、简便和比较准确等优点,有较好的实用价值。更多还原

【Abstract】 A new method of standard curve analysis associated with X-ray photoelectron spectroscopy (XPS) is presented for measuring the thickness of ultrathin SiO2 layer on Si substrate.In this method,XPS spectra of series SiO2/Si standard samples with different known thicknesses of silicon oxides are firstly recorded,and then the ratios of Si2p peak heights corresponding to SiO2 and Si,viz.R=HSiO2/HSi,are calculated.The known thicknesses of silicon oxides are plotted against the peak height ratios and an XPS standard curve is derived.Under the same experimental conditions,the samples with unknown thicknesses are measured by using XPS technique and then their thicknesses can be obtained from the XPS standard curve.The SiO2/Si standard samples were provided by authoritative lab with the advanced analytical equipments and rich experiences,and the oxide thicknesses were measured by multiple techniques.The present results show that the standard curve,plotted in terms of accuracy of the oxide thickness from the standard samples,can be used for the thickness measurement for ultrathin SiO2 on Si,and this method is valuable in practice owing to the swiftness,convenience and accuracy.更多还原