【摘要】 设计了一款应用在433MHz ASK接收机中的射频前端电路。在考虑了封装以及ESD保护电路的寄生效应的同时,从噪声、匹配、增益和线性度等方面详细讨论了低噪声放大器和下混频器的电路设计。采用0.18μm CMOS工艺,在1.8V的电源电压下射频前端电路消耗电流10.09 mA。主要的测试结果如下:低噪声放大器的噪声系数、增益、输入P1dB压缩点分别为1.35 dB、17.43 dB、-8.90dBm;下混频器的噪声系数、电压增益、输入P1dB压缩点分别为7.57dB、10.35dB、-4.83dBm。更多还原

【Abstract】 The RF front-end circuits for 433 MHz ASK receiver are proposed in this paper.The design methodology of the low noise amplifier and down-mixer is presented in detail from the aspects of noise,matching,voltage gain and linearity,with the parasitic effects of the package and ESD protection circuit being considered.Fabricated in 0.18 μm CMOS process,the RF front-end circuit totally consumes 10.09 mA from 1.8 V power supply.The major measurement results are described as follows: the low noise amplifier achieves 1.35 dB NF,17.43 dB gain and-8.90 dBm input-referred P1dB(at 50 Ω input impedance);the down-mixer features 7.57 dB NF,10.35 dB gain and-4.83 dBm input-referred P1dB(at 100 Ω input impedance).更多还原