【摘要】 设计并生长了一种新的InGaP/GaAs/InGaP DHBT结构材料,采用在基区和集电区之间插入n+-InGaP插入层结构,以解决InGaP/GaAs/InGaP DHBT集电结导带尖峰的电子阻挡效应问题。采用气态源分子束外延(GSMBE)技术,通过优化生长条件,获得了高质量外延材料,成功地生长出带有n+-InGaP插入层结构的GaAs基InGaP/GaAs/InGaP DHBT结构材料。采用常规的湿法腐蚀工艺,研制出发射极面积为100μm×100μm的新型结构InGaP/GaAs/InGaP DHBT器件。直流特性测试的结果表明,所设计的集电结带有n+-InGaP插入层的InGaP/GaAs/InGaP DHBT器件开启电压约为0.15V,反向击穿电压达到16V,与传统的单异质结InGaP/GaAs HBT相比,反向击穿电压提高了一倍,能够满足低损耗、较高功率器件与电路制作的要求。更多还原

【Abstract】 A new InGaP/GaAs/InGaP DHBT structure has been designed and grown in this work.An n+-InGaP layer at base/collector interface was inserted between collector and base to eliminate the carrier blocking effect.The InGaP/GaAs/InGaP DHBT structures were grown by gas source molecular beam(GSMBE).A good crystalline quality of GaAs,InGaP,and InGaAs materials was obtained through optimizing the growth conditions.The InGaP/GaAs/InGaP DHBT structures were also grown successfully.The InGaP/GaAs/InGaP DHBT device with emitter area of 100 μm×100 μm was fabricated by wet mesa etching process.The offset voltage of the InGaP/GaAs/InGaP DHBT is 0.15 V,and the breakdown voltage as high as 16 V was obtained.It means that the breakdown voltage of the DHBT designed in this work is one times higher than that of the single heterojunction HBTs.These results indicate that the InGaP/GaAs/InGaP DHBT is suitable for low power-dissipation and high power applications.更多还原