【摘要】 本文以能量为1.0 MeV的电子束辐照VO2(B)薄膜,对电子辐照在薄膜中产生的缺陷进行了理论计算,同时使用X射线衍射仪、原子力显微镜、分光光度计对薄膜进行测试,分析了电子辐照对薄膜结构、形貌与紫外-可见光谱(280~880nm)的影响。结果显示:电子辐照可以在薄膜中引入点缺陷并产生退火效应,电子辐照使薄膜的表面晶粒细化,辐照后薄膜光谱的吸收峰位发生移动,其移动的最大位移达到21nm,辐照后薄膜的光学禁带宽度也有所增加。更多还原

【Abstract】 VO2(B) thin films were irradiated by electron(1.0 MeV) beams with different doses.The defect induced by electron irradiation was calculated.Structural,surface and spectrum(280~880 nm) characterizations have been analyzed.As a result,the electron beams induce the defect effect and the anneal effect in the films,the surface grain of the films are altered smaller by electron beams,the absorption spectrum peak is moved by electron beams and the maximum displacement reaches 21 nm.The optical band gap(Eg) of the films has also increased after electron beams.更多还原