【摘要】 采用高温高压方法,在900K的温度条件下,成功合成出CoSb2.750 TexGe0.250-x(x=0.125,0.175,0.200)n型方钴矿化合物,并考察了不同的压力对其电输运性能的影响规律。室温下对样品的电阻率(ρ),Seebeck系数(S)进行了测试分析。电学性能测试表明,方钴矿CoSb2.750 TexGe0.250-x化合物的导电类型为n型,电阻率和Seebeck系数的绝对值随着压力的升高而增加,随着Te掺杂量的增加而降低。功率因子随合成压力增大而降低,随Te掺杂量的增加而升高。CoSb2.750Te0.200Ge0.050在2GPa时具有最大的功率因子为7.59μW/(cm.K2)。更多还原

【Abstract】 In this letter,n-type skutterudite compounds of CoSb2.750TexGe0.250-x(x=0.125,0.175,0.200) were synthesized by high pressure and high temperature method.The effect of different pressure on the transport properties of CoSb2.750TexGe0.250-x was studied at room temperature.The electrical properties including the seebeck coefficient and the electrical resistivity depending on the synthetic pressure were measured.The measurement results indicate that CoSb2.750TexGe0.250-x skutterudite compounds are n-type conduction.The Absolute values of Seebeck coefficient and electrical resistivity for CoSb2.750TexGe0.250-x increase with an increase of the synthetic pressure and Te doped content.The highest power factor of 7.59μW/(cm·K2) is obtained for CoSb2.750Te0.200Ge0.050 at 2GPa.更多还原