【摘要】 采用绝缘层上Si(SOI)材料设计制备了3×5纳米线阵列波导光栅(AWG),器件大小为110μm×100μm。利用简单传输法模拟了器件的传输谱,并采用二维时域有限差分(FDTD)模拟中心通道输出光场的稳态分布,模拟结果表明,器件的通道间隔为11 nm,通道间的串扰为18 dB。通过电子束曝光(EBL)和感应耦合等离子(ICP)刻蚀制备了所设计的器件,光输出谱测试分析表明,器件中心通道的片上损耗为9 dB,通道间隔为8.36～10.40 nm,中心输出通道的串扰为6 dB。在误差允许范围内,设计和测试的结果一致。更多还原

【Abstract】 A 110 μm×100 μm ultracompact 3×5 arrayed waveguide grating(AWG) demultiplexer is designed and fabricated based on Si on insulator(SOI) nanowire.The transmission spectra are simulated by the simple transmission function,and the stable output optical field distribution is simulated by 2D finite difference time domain(FDTD).The simulated results show that the device is designed with a channel spacing of 11 nm and crosstalk of 18 dB.The device is fabricated on a silicon-on-isolator(SOI) substrate by electron beam lithography(EBL) and inductively coupled plasma(ICP) etching.The demultiplexing characteristics are observed with a channel spacing of 8.36-10.4 nm,crosstalk of about 6 dB and a loss of about 9 dB for the central channel.The test results are consistent with the design results in the error range.更多还原