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pn结对微机械p/n多晶Si热电堆性能的影响

The effect of pn junction on the performance of p/n polysilicon thermopiles

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【作者】 李艳龙王翊周宏刘延祥李铁王跃林

【Author】 LI Yan-long,WANG Yi,ZHOU Hong,LIU Yan-xiang,LI Tie,WANG Yue-lin(State Key Laboratory of Transducer Technology,State Laboratory of Microsystem Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Science,Shanghai 200050,China)

【机构】 中国科学院上海微系统与信息技术研究所传感技术国家重点实验室微系统技术国家实验室

【摘要】 为了研究pn结对微机械p/n多晶Si热电堆性能的影响,设计了两种结构的热电堆器件,采取不同的退火条件,对其结构进行了研究。实验结果表明,工艺过程中形成的pn结会使得热电堆的电阻变大,信号变小,退火条件决定了热电堆器件能否正常工作。因此,在设计热电堆时应该尽量避免pn结,可以采用p-Si/n-Si分离结构予以解决。

【Abstract】 In order to reduce the size of thermopiles and improve the duty cycle of the devices,the close-arranged thermocouples are usually used to form the thermopile.As the impurities in multi-crystal Si can be horizontal proliferation during annealing,pn junction will form at the junctions of the p and n type materials to impact the thermopiles performance.To research the effect of pn junction on the performance of p/n polysilicon thermopiles,two kinds of structures of thermopile devices are designed,and different annealing conditions are adopted to study them.Experimental results show that the formation of pn junction in the process can make thermopile resistance become larger,the infrared response signal become smaller,and the annealing conditions determine the thermopiles work properly.Thus,in the design of thermopiles,pn junction should be avoided,and the separated structure can solve this problem.

【关键词】 pn结热电堆横向扩散
【Key words】 pn junctionthermopileshorizontal proliferation
  • 【文献出处】 光电子.激光 ,Journal of Optoelectronics.Laser , 编辑部邮箱 ,2010年08期
  • 【分类号】TN362
  • 【下载频次】143
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