Formation of SiC Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemical Vapor Deposition

【摘要】 <正> Growth of SiC nanowires in plasma-assisted hot filament chemical-vapor-depositionby using hexamethyldisiloxane (HMDSO) as the gas source is reported. The SiC nanowires (SiCNWs)grew on Au-coated silicon substrate with core-shell structure, where the core consisted ofpolycrystalline SiC grains and the shell exhibited amorphous structure. The featured structuressuch as cones, polyhedrons, ball-liked particles were observed in the case without, plasraa assistance.The underlying mechanism for the growth of nanostructures was also discussed. The highchemical activity induced by the plasma process plays an important role in using monomer togenerate nanostructure.更多还原

【Abstract】 Growth of SiC nanowires in plasma-assisted hot filament chemical-vapor-deposition by using hexamethyldisiloxane (HMDSO) as the gas source is reported. The SiC nanowires (SiCNWs) grew on Au-coated silicon substrate with core-shell structure, where the core consisted of polycrystalline SiC grains and the shell exhibited amorphous structure. The featured structures such as cones, polyhedrons, ball-liked particles were observed in the case without, plasraa assistance. The underlying mechanism for the growth of nanostructures was also discussed. The high chemical activity induced by the plasma process plays an important role in using monomer to generate nanostructure.更多还原