【摘要】 简要介绍了高温离子注入靶室的设计。通过设计辅助加热装置使离子注入时晶片表面温度达到500℃以上,并通过靶盘旋转和往返平移扫描的方式实现了晶片片内和片间的温度均匀性,满足了碳化硅掺杂、SOI晶片制造等特殊需要。更多还原

【Abstract】 The design of high temperature target chamber was described briefly in this paper.The temperature of wafer surface has reached up to 500 ℃ by designing a wafer heater device.And temperature uniformities between within-wafer and wafer to wafer have been achieved by the target disk revolution and variable-speed scanning.So the high temperature ion implantation target chamber has met to the needs of silicon carbon doping,SOI wafer fabrication and so on.更多还原