【摘要】 采用化学气相沉积方法,以Ni薄膜为催化剂,CH₄、SiH₄为反应气体,H₂为载气,成功地在Si基片上生长出β-SiC晶须。运用X射线衍射和扫描电子显微镜系统地研究了不同催化剂厚度对SiC晶须形貌、结构和化学成分的影响。更多还原

【Abstract】 β-SiC whiskers grown on the Si substrate are prepared by chemical vapor deposition with Ni film as catalyst,CH₄,SiH₄ as the reactive gas,H₂ as carrier gas.The effects of catalyst thickness on the SiC whisker morphology, structure and chemical composition are studied using X-ray diffraction and scanning electron microscope.更多还原