【摘要】 利用MEMS技术在N型<100>晶向的单晶硅衬底上设计并制作了以纳米硅/单晶硅异质结为源极和漏极的P-MOSFETs脉象传感器。在方形硅膜上制作四个以纳米硅/单晶硅异质结为源极和漏极P-MOSFETs,并将P-MOSFETs的沟道电阻设计成惠斯通电桥结构,从而实现对微小脉象信号的准确检测。实验结果表明,该硅脉象传感器在恒压源-3.0V供电条件下,灵敏度为1.623mV/kPa,准确度为2.029%F.S。更多还原

【Abstract】 A silicon pulse sensor is designed and fabricated on N-type <100> crystal silicon by MEMS techniques, in which the P-MOSFETs have the nc-Si/c-Si heterojunction as source and drain. Four P-MOSFETs which have the nc-Si/c-Si heterojunction as source and drain are fabricated in a square silicon film. The channel resistance of the nc-Si/c-Si heterojunction P-MOSFETs is designed as a Wheatstone bridge configuration and the silicon pulse sensor can accurately detect the small pulse signal. The experimental results show that the silicon pulse sensor has a sensitivity of 1.623 mV/kPa and a accuracy of 2.029%F·S under a constant voltage -3.0 V supply.更多还原