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Photoelectric conversion characteristics of ZnO/SiC/Si heterojunctions

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【作者】 邬小鹏陈小庆孙利杰毛顺傅竹西

【Author】 Wu Xiaopeng Chen Xiaoqing Sun Lijie Mao Shun and Fu Zhuxi (Department of Physics,University of Science and Technology of China,Hefei 230026,China)

【机构】 Department of Physics,University of Science and Technology of China

【摘要】 <正>A series of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were prepared by DC sputtering.Their structural properties,Ⅰ-Ⅴcurves,photovoltaic effects and photo-response spectra were studied.The photoelectric conversion characteristics of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were investigated.It is found that the photoelectric conversion efficiency of the n-ZnO/n-SiC/p-Si heterojunction is about four times higher than that of the n-ZnO/p-Si heterojunction.The photovoltaic response spectrum indicated that the photoresponse curve of n-ZnO/nSiC /p-Si increased more strongly than that of n-ZnO/p-Si with the wavelength increasing.It shows that the photoresponse of n-ZnO/p-Si can be enhanced when inserting a 3C-SiC layer between ZnO and Si.There is one inflexion in the photocurrent response curve of the n-ZnO/p-Si heterojunction and two inflexions in that of the n-ZnO/n-SiC/p-Si heterojunction. It is clear that the 3C-SiC plays an important role in the photoelectric conversion of the n-ZnO/n-SiC/p-Si heterojunction.

【Abstract】 A series of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were prepared by DC sputtering.Their structural properties,Ⅰ-Ⅴcurves,photovoltaic effects and photo-response spectra were studied.The photoelectric conversion characteristics of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were investigated.It is found that the photoelectric conversion efficiency of the n-ZnO/n-SiC/p-Si heterojunction is about four times higher than that of the n-ZnO/p-Si heterojunction.The photovoltaic response spectrum indicated that the photoresponse curve of n-ZnO/nSiC /p-Si increased more strongly than that of n-ZnO/p-Si with the wavelength increasing.It shows that the photoresponse of n-ZnO/p-Si can be enhanced when inserting a 3C-SiC layer between ZnO and Si.There is one inflexion in the photocurrent response curve of the n-ZnO/p-Si heterojunction and two inflexions in that of the n-ZnO/n-SiC/p-Si heterojunction. It is clear that the 3C-SiC plays an important role in the photoelectric conversion of the n-ZnO/n-SiC/p-Si heterojunction.

【基金】 Project supported by the National Natural Science Foundation of China(No.50532070);the Funds of Chinese Academy of Sciences for Knowledge Innovation Program(No.KJCX3.5YW.W01)
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2010年10期
  • 【分类号】TN304.21
  • 【被引频次】2
  • 【下载频次】93
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