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Ultra high-speed InP/InGaAs SHBTs with ft and fmax of 185 GHz

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【作者】 周磊； 金智； 苏永波； 王显泰； 常虎东； 徐安怀； 齐鸣；

【Author】 Zhou Lei Jin Zhi Su Yongbo Wang Xiantai Chang Hudong Xu Anhuai and Qi Ming (1 Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China) (2 Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029,China) (3 Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China)

【机构】 Institute of Microelectronics,Chinese Academy of Sciences； Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences； Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences；

【摘要】 <正>An InP/InGaAs single heterojunction bipolar transistor（SHBT） with high maximum oscillation frequency (fmax) and high cutoff frequency（ft） is reported.Efforts have been made to maximize fmax and ft simultaneously including optimizing the epitaxial structure,base-collector mesa over-etching and base surface preparation.The measured ft and fmax both reached 185 GHz with an emitter size of 1×20μm2,which is the highest fmax for SHBTs in China’s mainland.The device is suitable for ultra-high speed digital circuits and low power analog applications.

【Abstract】 An InP/InGaAs single heterojunction bipolar transistor（SHBT） with high maximum oscillation frequency (fmax) and high cutoff frequency（ft） is reported.Efforts have been made to maximize fmax and ft simultaneously including optimizing the epitaxial structure,base-collector mesa over-etching and base surface preparation.The measured ft and fmax both reached 185 GHz with an emitter size of 1×20μm2,which is the highest fmax for SHBTs in China’s mainland.The device is suitable for ultra-high speed digital circuits and low power analog applications.

【关键词】 InP； single heterojunction bipolar transistor； maximum oscillation frequency；
【Key words】 InP； single heterojunction bipolar transistor； maximum oscillation frequency；
【基金】 supported by the State Key Development Program for Basic Research of China(No.2010CB327502);the National Natural Science Foundation of China(No.60976064)
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2010年09期
  • 【分类号】TN322.8
  • 【被引频次】2
  • 【下载频次】42
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