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Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices

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【Author】 Zhang Shifeng Ding Koubao Han Yan Han Chenggong Hu Jiaxian and Zhang Bin (Institute of Microelectronics & Photoelectronics,Zhejiang University,Hangzhou 310027,China)

【机构】 Institute of Microelectronics & Photoelectronics,Zhejiang University；

【摘要】 <正>Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented.A constant current pulse stressing test is applied to the device.Two different degradation mechanisms are identified by analysis of electrical data,technology computer-aided design(TCAD) simulations and charge pumping measurements.The first mechanism is attributed to positive oxide-trapped charges in the N-type drift region,and the second one is due to decreased electron mobility upon interface state formation in the drift region.Both of the mechanisms are enhanced with increasing avalanche breakdown current.更多还原

【Abstract】 Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented.A constant current pulse stressing test is applied to the device.Two different degradation mechanisms are identified by analysis of electrical data,technology computer-aided design(TCAD) simulations and charge pumping measurements.The first mechanism is attributed to positive oxide-trapped charges in the N-type drift region,and the second one is due to decreased electron mobility upon interface state formation in the drift region.Both of the mechanisms are enhanced with increasing avalanche breakdown current.更多还原

【关键词】 NLDMOS； avalanche breakdown； degradation； charge-pumping；
【Key words】 NLDMOS； avalanche breakdown； degradation； charge-pumping；

【基金】 supported by the National Science & Technology Major Project of China(No.2009ZX01033-001-003)

【文献出处】半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2010年09期

【分类号】TN432
【被引频次】5
【下载频次】40

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