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Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method

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【作者】 魏康亮刘晓彦杜刚韩汝琦

【Author】 Wei Kangliang Liu Xiaoyan Du Gang Han Ruqi (Institute of Microelectronics,Peking University,Beijing 100871,China)

【机构】 Institute of Microelectronics,Peking University

【摘要】 <正>We demonstrate a two-dimensional(2D) full-band ensemble Monte-Carlo simulator for heterostructures, which deals with carrier transport in two different semiconductor materials simultaneously as well as at the boundary by solving self-consistently the 2D Poisson and Boltzmann transport equations(BTE).The infrastructure of this simulator,including the energy bands obtained from the empirical pseudo potential method,various scattering mechanics employed,and the appropriate treatment of the carrier transport at the boundary between two different semiconductor materials,is also described.As verification and calibration,we have performed a simulation on two types of silicon-germanium(Si-Ge) heterojunctions with different doping profiles—the p-p homogeneous type and the n-p inhomogeneous type.The current-voltage characteristics are simulated,and the distributions of potential and carrier density are also plotted,which show the validity of our simulator.

【Abstract】 We demonstrate a two-dimensional(2D) full-band ensemble Monte-Carlo simulator for heterostructures, which deals with carrier transport in two different semiconductor materials simultaneously as well as at the boundary by solving self-consistently the 2D Poisson and Boltzmann transport equations(BTE).The infrastructure of this simulator,including the energy bands obtained from the empirical pseudo potential method,various scattering mechanics employed,and the appropriate treatment of the carrier transport at the boundary between two different semiconductor materials,is also described.As verification and calibration,we have performed a simulation on two types of silicon-germanium(Si-Ge) heterojunctions with different doping profiles—the p-p homogeneous type and the n-p inhomogeneous type.The current-voltage characteristics are simulated,and the distributions of potential and carrier density are also plotted,which show the validity of our simulator.

【基金】 Project supported by the National Fundamental Basic Research Program of China(No.2006CB302705);the Foundation for Key Program Project of Chinese Ministry of Education(No.107003).
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2010年08期
  • 【分类号】TN322.8
  • 【被引频次】3
  • 【下载频次】67
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