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A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications

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【作者】 张浩李智群王志功章丽李伟

【Author】 Zhang Hao Li Zhiqun Wang Zhigong Zhang Li and Li Wei (Institute of RF-& OE-ICs,Southeast University,Nanjing 210096,China)

【机构】 Institute of RF-& OE-ICs,Southeast University

【摘要】 <正>This paper presents a variable gain low-noise amplifier(VG-LNA) for 5 GHz applications.The effect of the input parasitic capacitance on the inductively degenerated common source LNA’s input impedance is analyzed in detail.A new ESD and LNA co-design method was proposed to achieve good performance.In addition,by using a simple feedback loop at the second stage of the LNA,continuous gain control is realized.The measurement results of the proposed VG-LNA exhibit 25 dB(-3.3 dB to 21.7 dB) variable gain range,2.8 dB noise figure at the maximum gain and 1 dBm IIP3 at the minimum gain,while the DC power consumption is 9.9 mW under a 1.8 V supply voltage.

【Abstract】 This paper presents a variable gain low-noise amplifier(VG-LNA) for 5 GHz applications.The effect of the input parasitic capacitance on the inductively degenerated common source LNA’s input impedance is analyzed in detail.A new ESD and LNA co-design method was proposed to achieve good performance.In addition,by using a simple feedback loop at the second stage of the LNA,continuous gain control is realized.The measurement results of the proposed VG-LNA exhibit 25 dB(-3.3 dB to 21.7 dB) variable gain range,2.8 dB noise figure at the maximum gain and 1 dBm IIP3 at the minimum gain,while the DC power consumption is 9.9 mW under a 1.8 V supply voltage.

【基金】 supported by the SEU-Winbond United Research Center and the National High Technology Research and Development Program of China(No.2007AA01Z2A7).
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2010年05期
  • 【分类号】TN722
  • 【下载频次】130
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