【摘要】 讨论了采用Ⅲ-Ⅴ族化合物材料制备多结太阳电池时的材料选择和实现方案,重点探讨了采用渐变缓冲层、引入InGaAsN等新材料以及直接键合等三种方法。其中,采用渐变缓冲层结构的Ge/Ga0.35In0.65P/Ga0.83In0.17As三结太阳电池,转换效率提高到41.1%。而采用直接键合技术设计的InGaP/GaAs/InGaAsP/InGaAs四结太阳电池,以及应用InGaAsN等新材料设计的五结以上太阳电池,其转换效率还有可能达到新的高度。此外,一些创新技术,例如电池的反向生长技术、转移层技术以及将GaAs的量子阱结构和量子点应用于多结太阳电池,都为太阳电池效率的进一步提高提供了新的契机。更多还原

【Abstract】 Recent progress of Ⅲ-Ⅴ compounds for multi-junction tandem solar cells is reviewed,especially for the fabrication of Ⅲ-Ⅴ compounds and approaches for realization of tandem solar cells.Three main approaches are highlighted:choosing the structure of graded buffer layers,using InGaAsN as new fabrication materials,and adopting the direct-bonded technology.The Ge/Ga0.35In0.65P/Ga0.83In0.17As triple-junction solar cell with graded buffer layers achieves a new conversion efficiency of 41.1%.Wafer bonding technique may lead to a quadruple-junction InGaP/GaAs/InGaAsP/InGaAs solar cell that in theory would have higher efficiency than current Ge/GaAs/InGaP triple-junction cells.And the 5-junction solar cell with InGaAsN materials may also achieve this new level.Some technical innovations used in solar cell fabrication,such as inverted metamorphic growth,layer transfer,GaAs multiple quantum well(MQW)and GaAs quantum dots structures,are proposed,which brings new opportunity for the development of solar cell.更多还原