【摘要】 半导体同位素电池由于其寿命长、集成性优良、环境适应性强等特点成为解决MEMS能源问题的理想手段。利用4H-SiC材料的宽禁带特性,制造了4H-SiC肖特基同位素电池。对电池的耗尽层厚度以及掺杂浓度进行了优化设计,对肖特基金属进行了选择。使用4mCi/cm2的63Ni作为同位素电池的放射源对制造的同位素电池进行了测试。测试结果表明,该同位素电池可以获得31.3nW/cm2的功率密度、0.5V的开路电压、3.13×10-8A/cm2的短路电流密度和1.3%的转换效率。将电池的输出特性和硅基的平板型、3D结构电池输出特性进行了比较,证明4H-SiC肖特基同位素电池能够获得较高的功率密度。电池的性能可通过提升势垒高度、提高工艺质量、更换同位素等方式得到提高。更多还原

【Abstract】 A semiconductor betavoltaic battery provides a good solution to power supply of MEMS in terms of its long lifetime,easy integration and high environmental adaptability.With the wide band-gap of 4H-SiC,the 4H-SiC Schottky betavoltaic battery was fabricated.The depletion layer thickness and doping concentration were optimized,and the Schottky metal was chosen.The betavoltaic battery was fabricated and tested under the illumination of 4 mCi/cm2 63Ni source.The results show that the obtained power density is 31.3 nW/cm2 with an open circuit voltage of 0.5 V,a short circuit current density of 3.13×10-8 A/cm2,and a conversion efficiency of 1.3%.The output performance of the battery was compared with those of Si based planar and 3D structure batteries.The comparison results reveal that the 4H-SiC Schottky betavoltaic battery can obtain higher power density.The performance of the 4H-SiC Schottky betavoltaic battery can be improved by some methods in the future,such as enhancement of the barrier height,improvement of the process quality,change of the type of the isotope,etc.更多还原