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计算机硬盘基片的化学机械清洗技术研究
Chemical Mechanical Cleaning of Computer Hard Disk Substrate
【摘要】 目前,CMP技术对计算机硬盘基片(盘片)进行抛光,盘片表面粗糙度达到原子级平整,抛光后表面的清洗质量直接关系到CMP最终技术水平的高低。采用静态浸泡实验以及浸泡、擦洗、超声清洗实验,结合一系列的表面微观分析,研究了盘片CMP后清洗过程中的化学作用、机械作用以及清洗剂、清洗方式等物理化学要素对CMP后清洗效果的影响。结果表明,CMP后清洗是一种机械作用、化学作用等综合作用的过程。采用优化的清洗工艺及清洗剂,得到了低腐蚀、高洁净、平整的硬盘基片表面。
【Abstract】 At present,the surface of computer hard disk substrate reaches atom-scale planarization after CMP.Post-CMP cleaning is one of the key factors influencing the CMP performances.The influences of chemical effect,mechanical effect,detergent and cleaning methods on the post-CMP cleaning performances were investigated by using immersion corrosion test,cleaning tests(immersion,scrubing and ultrasonic)and following microcosmic analysis on disk surfaces.The results show that post-CMP cleaning is a chemical-mechanical cleaning process which includes chemical and mechanical effects.By using the immersion-scrubbing-ultrasonic cleaning method and the prepared cleaning solution,a lower corrosive,ultra-clean and smooth hard disk substrate surface was obtained.
【Key words】 chemical mechanical polishing(CMP); chemical mechanical cleaning; hard disk substrate; atom-scale planarization; corrosion;
- 【文献出处】 半导体技术 ,Semiconductor Technology , 编辑部邮箱 ,2010年08期
- 【分类号】TP333.35
- 【被引频次】2
- 【下载频次】216