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三层金属磁控溅射复合膜的XRD应力分析
XRD Stress Analysis on Three-Layer Metal(Alloy) Films Formed by Magnetic Sputtering
【摘要】 用磁控溅射方法沉积制备的Ag/Ti-W/Ni-Cr三层复合电极薄膜上的Ag膜在工艺中容易脱落,而SiO2衬底上的Ag膜则具有良好的粘附性能。X射线衍射方法常用来检测薄膜中的应力,用X射线衍射技术(XRD)衍射峰位置的移动可判断膜中出现的是压应力还是张应力。实验中,用XRD对三层复合薄膜作了薄膜的应力分析,确定在160℃溅射沉积后,Ag膜中存在压应力,该应力使Ag膜(111)晶面间距(d)比SiO2衬底上的Ag膜晶面间距小约0.35%。采用500℃,15 min N2热退火的方法,可使三层复合膜中Ag膜的XRD峰位回复到与SiO2衬底上Ag膜相同的谱峰位置,说明采用热退火的方法可有效消除复合膜的应力,防止Ag膜的脱落。
【Abstract】 The Ag film on Ag/Ti-W/Ni-Cr three-layer electrode films deposited by magnetic sputtering could desquamate from the substrate easily during process,but Ag films on SiO2 substrate has good adhesive property.Usually X-ray diffraction(XRD) is used to check the stress in the films.By diffraction spectrum shift,it can be judged if it is compressive stress or tension stress in the film.In the experiments,the film stress analysis was carried out on the Ti-W/Ni-Cr substrate.It is confirmed that the Ag film deposited by magnetic sputtering method at 160 ℃ exists compressive stress,it makes the crystal constant d along the(111)orientation reduced about 0.35% compared with the Ag films deposited on SiO2 substrate at the same conditions.The result indicated that the Ag XRD spectra of the three-layer metal(alloy) films can move back to the same position with Ag film on SiO2 substrate annealed at 500 ℃ for 15 min in N2.It means that the annealing is an effective method to remove the stress in the multi-layer films prepared by magnetic sputtering method.
【Key words】 multi-metal composite film electrode; magnetron sputtering deposition; X-ray diffraction; stress analysis;
- 【文献出处】 半导体技术 ,Semiconductor Technology , 编辑部邮箱 ,2010年07期
- 【分类号】TB383.2
- 【被引频次】3
- 【下载频次】458