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Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposited by DC arc plasma jet chemical vapor deposition

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【作者】 瞿全炎邱万奇曾德长刘仲武代明江周克崧

【Author】 QU Quan-yan1, 2, QIU Wan-qi1, ZENG De-chang1, LIU Zhong-wu1, DAI Ming-jia ng3, ZHOU Ke-song3 1. School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; 2. Guangdong Institute of Special Equipments Inspection and Supervision, Guangzhou 510655, China; 3. Guangzhou Research Institute of Non-f errous Metals, Guangzhou 510651, China

【机构】 School of Materials Science and Engineering, South China University of TechnologyGuangdong Institute of Special Equipments Inspection and SupervisionGuangzhou Research Institute of Non-ferrous Metals

【摘要】 The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy(SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K·cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880-920 ℃ due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.

【Abstract】 The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy(SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K·cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880-920 ℃ due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.

【基金】 Projects(U0734001, 50874050) supported by the National Natural Science Foundation of China;Projects(2006A11002001, 2007B010600007, 2007B010600043)supported by the Guangdong Provincial Science & Technology Program of China;Projects(2006Z2-D0121, 2006Z2-D0131, 2006Z3-D0281) supported by the Guangzhou Civil Science & Technology Program of China
  • 【文献出处】 Transactions of Nonferrous Metals Society of China ,中国有色金属学会会刊(英文版) , 编辑部邮箱 ,2009年01期
  • 【分类号】TG174.4
  • 【被引频次】3
  • 【下载频次】109
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