【摘要】 通过离子注入技术在铝中引入C,He两元素,并采用氦热脱附谱(THDS)研究了C掺杂对铝中氦行为的影响。注He纯铝的THDS中存在四个氦释放区间,分别归于小间隙环的解离、位错环的合并、位错环的皱缩及氦泡向样品表面的迁移。C掺杂后,铝中形成了高热稳定性的HenVmCx型复合物,造成样品中气体释放延迟。然而,随着C掺杂剂量的增加,THDS谱发生显著改变,低温区出现明显的释放峰,且C掺杂量越高,低温区的释放峰个数越多。更多还原

【Abstract】 Effect of carbon doping on helium behavior in aluminum was investigated by thermal helium desorption spectrometry(THDS).The samples were irradiated with 35 keV C+ and/or 10 keV He+ at room temperature to certain doses via ion implantation technology.Four helium release ranges were observed in THDS spectra of He+ implanted pure aluminum,which could be attributed to dissociation of small interstitial loops,coalescence of dislocation loops,shrinkage of dislocation and gliding of helium bubbles to the specimen surface,respectively.High thermally stable HenVmCx type complexes formed in aluminum after C doping,resulting in the retardation of gas release.With the increase of C doping dose,the THDS spectra changed significantly,and distinct desorption peaks were observed in lower temperature ranges,the higher dose C doped,more desorption peaks in lower temperature ranges would be.更多还原