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片状纳米硅的结构及发光性能表征
Structure and Photoluminescence Properties Characterization of Sheet-Shape Nanometer Silicon
【摘要】 采用精密磨削加工工艺法制备了厚度为纳米级片状硅,以FESEM,HRTEM,EDS,SEAD及XRD等分析手段对片状纳米硅的形貌、结构及组分进行分析和表征。结果表明,所制得的片状纳米硅为纳米级片状结构,片平均厚度为10~15 nm,具有立方金刚石结构。由于量子限制效应的影响,所制得的片状纳米硅的拉曼光谱发生了红移。室温下在404,495及750 nm处可观察到片状纳米硅的紫、绿、红3种光致发光谱,解释了片状纳米硅的发光机制。
【Abstract】 The sheet-shape nanometer silicon was obtained by fine grinding machining process.The morphology,structure,and chemical composition of the sheet-shape nanometer silicon were characterized by field-emission scanning electron microscopy(FESEM),high-resolution transmission electron microscopy(HRTEM) coupled with electron energy dispersive spectroscopy(EDS),selected area electron-diffraction(SEAD),and X-ray diffraction(XRD).The results revealed that the sheet-shape nanometer silicon powder had diamond cubic structure and the average thickness distributed from 10 nm to 15 nm.Being influenced by the quantum effect,Raman spectrum of the sheet-shape nanometer silicon powder was found to be red shifted.Moreover,violet-light,green-light and red-light could be observed at 404,495,and 750 nm respectively by photoluminescence investigation at room temperature and the photoluminescent mechanism was analyzed.
【Key words】 nanometer silicon; fine grinding process; photoluminescence; characterization;
- 【文献出处】 稀有金属 ,Chinese Journal of Rare Metals , 编辑部邮箱 ,2009年02期
- 【分类号】TN304.05
- 【下载频次】166