【摘要】 本文报道了一种叠层结构有机场效应管,它有别于一般的顶接触式和底接触式结构OFET。该器件采用真空镀膜制备,以SiO2作为绝缘层,酞菁铜CuPc作为沟道层。测量出其输出特性曲线,可看见较明显的场效应特性。对器件温度特性的研究表明,漏极电流随着温度的升高而增大。XRD分析表明,在Si/SiO2和Si/SiO2/Al两种衬底上蒸镀制备的CuPc薄膜呈多晶结构,且两种衬底上的CuPc薄膜晶粒尺度大致相等。更多还原

【Abstract】 A new laminated structure was applied to the organic field-effect transistors (OFETs), which is different from the conventional top-contact and bottom-contact structures. With the vacuum film deposition process, SiO2 was taken as the insulation layer and CuPc as the channel layer. The measured output characteristic curves showed that the device exhibits unambiguous characteristics of field-effect. Investigation on the temperature characteristics showed that the drain current increases with the temperature. XRD analysi s indicated that CuPc thin films deposited on both Si/SiO2 and Si/SiO2/Al substrates by vacuum evaporation coating are of polycrystalline structure, and the average grain size of the CuPc films deposited on the two different substrates is the same on the whole更多还原