【摘要】 采用中频交流磁控溅射方法,在玻璃基底上沉积Cu-In预制膜,采用固态硫化法制备获得了CuInS2(CIS)吸收层薄膜。考察了预制膜Cu/In原子比及硫化温度对于CIS薄膜结构及禁带宽度影响。通过XRD及Raman光谱分析了薄膜结构,通过近红外透过曲线得出薄膜禁带宽度。结果表明,随着预制膜中Cu与In原子比(Cu/In)及硫化温度不断升高,薄膜CuAu(CA)相含量逐渐降低,黄铜矿(CH)相逐渐升高,薄膜结晶性逐渐改善。600℃以上硫化时薄膜中主要存在CH相CuInS2。薄膜禁带宽度随着预制膜中Cu/In原子比及硫化温度不断升高而升高,Cu/In原子比为1.05,硫化温度为500℃时薄膜禁带宽度可达1.40eV。更多还原

【Abstract】 Cu/In precursors have been prepared on glass substrate by mid-frequency AC magnetron sputtering technique. CuInS2 (CIS) absorber layers were obtained by sulfurization with solid element sulfuriazation method. The influences of the Cu/In molar ratio in the precursors and the sulfurization temperature on the microstructure, and the energy gap of the CIS thin films were investigated. Raman spectrum, XRD and near-infrared transmission curves were employed to analyze the microstructures and the band gap of the CIS absorbers, respectively. The results show that the intensity of CH phase increased by increasing the Cu/In molar ratio and the sulfurization temperature with the intensity of CuAu (CA) phase decreasing. The CH phase dominated in the layers when the sulfurization temperature was 600℃. The band gaps of the CuInS2 increased when the CuIn molar ratio increased and the sulfurization temperatre increased. The energy gap came up to 1.40eV when the Cu/In molar ratio was 1.05 and the sulfurization temperature was 500℃.更多还原