【摘要】 在自主研发的一系列p型导电Cu1-xNixO靶材基础上,选择具有最佳电导率的Cu0.95Ni0.05O靶材,采用脉冲等离子体沉积技术在室温条件下普通玻璃衬底上制备了Cu0.95Ni0.05O透明导电薄膜。Seebeck系数测试表明所有薄膜均为p型导电。通过x射线衍射和扫描电子显微镜分别研究了薄膜的晶格结构和表面形貌,证实了所制备薄膜均为非晶结构。研究了氧气压强、脉冲电压和脉冲电流等成膜条件对薄膜电学性能和光学性能的影响。在氧气压强为3.0Pa,脉冲电压为-18kV,脉冲电流为4.5mA条件下,获得了电导率最大值7.1S·cm-1,可见光区域的平均透射率为65%,光学禁带宽度为4.3eV的光电性能相对优良的p型透明导电薄膜。更多还原

【Abstract】 The Cu0.95Ni0.05O thin films were prepared on glass substrates at room temperature by pulsed plasma deposition process, where the Cu0.95Ni0.05O was chosen as target for its optimum conductivity from the series of p -type Cu1 -xNixO materials we developed. Testing results of Seebeck coefficient revealed that all films thus deposited are of p -type semi - conduction. The crystallinity and surface morphology of the films were investigated by XRD and SEM, respectively, and all films thus deposited are verified amorphous. The influence of such deposition parameters as oxygen pressure, pulsed voltage and pulsed current on the electrical and optical properties was investigated. The transparent film with maximum conductivity 7.1S·cm -1, average transmittance 65% in visible light region and forbidden bandwidth 4.3eV was obtained under oxygen pressure 3.0Pa and pulsed voltage -18kV at pulsed current 4.5mA.更多还原