【摘要】 在硅基底上用电子束蒸发方法制备了二氧化钛薄膜。通过XRD、AFM和薄膜应力测试仪研究了离子束轰击对薄膜应力的影响规律。结果表明沉积温度为323K、沉积速率为0.2nm.s-1时,二氧化钛薄膜具有较小的应力值,平均应力为48.2MPa。用能量为113eV的离子束轰击300s时,平均应力由72.9MPa的张应力变为16.7MPa的压应力。二氧化钛薄膜的微观结构变化是影响薄膜应力的主要因素。更多还原

【Abstract】 The titanium dioxide films,deposited by electron-beam evaporation of Ti2O3 powder on Si(100) wafer substrates,were surface modified with ion beam bombardment.The influence of the ion bombardment on its microstructures and stress were characterized with X-ray diffraction(XRD) and atomic force microscopy(AFM).The results show that fairly large stress exists in TiO2 films grown by electron beam evaporation,and that Ar ion sputtering significantly lowers the surface stress.The stress,with an average of 48.2 MPa,is fairly small,of the films grown at 323K and a deposition rate of 0.2nm/s.The ion bombardment at 113eV for 300s,turned an averaged tensile stress of 72.9MPa into a compressive stress of 16.7MPa.更多还原