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Size dependence of biexciton binding energy in single InAs/GaAs quantum dots

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【作者】 窦秀明孙宝权黄社松倪海桥牛智川杨富华贾锐

【Author】 Dou Xiu-Ming a), Sun Bao-Quan a), Huang She-Song a), Ni Hai-Qiao )a), Niu Zhi-Chuan a), Yang Fu-Hua a), and Jia Rui b) a)SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China b)Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

【机构】 SKLSM,Institute of Semiconductors,Chinese Academy of SciencesLaboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

【摘要】 This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show "binding" and "antibinding" properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler-London method.

【Abstract】 This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show "binding" and "antibinding" properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler-London method.

【基金】 Project supported by the National Natural Science Foundations of China (Grant Nos O69C041001 and 2007CB924904)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2009年06期
  • 【分类号】O471.1
  • 【下载频次】18
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