节点文献
Size dependence of biexciton binding energy in single InAs/GaAs quantum dots
【摘要】 This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show "binding" and "antibinding" properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler-London method.
【Abstract】 This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show "binding" and "antibinding" properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler-London method.
【Key words】 biexcition binding energy; single quantum dots; exciton molecular model; Heitler-London method;
- 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2009年06期
- 【分类号】O471.1
- 【下载频次】18