Solution-based metal induced crystallization of a-Si

【摘要】 This paper investigates a simplified metal induced crystallization(MIC) of a-Si,named solution-based MIC(S-MIC).The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol.a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC.It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time.The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si,besides the diffusion of nickel disilicide.The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6 cm2/(V · s).By using this S-MIC poly-Si,thin film transistors and display scan drivers were made,and their characteristics are presented.更多还原

【Abstract】 This paper investigates a simplified metal induced crystallization(MIC) of a-Si,named solution-based MIC(S-MIC).The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol.a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC.It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time.The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si,besides the diffusion of nickel disilicide.The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6 cm2/(V · s).By using this S-MIC poly-Si,thin film transistors and display scan drivers were made,and their characteristics are presented.更多还原