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Effect of hydrogenation time on magnetic and electrical properties of polycrystalline Si0.956 Mn0.044:B thin films

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【作者】 刘兴翀； 陆智海； 林应斌； 王剑峰； 路忠林； 吕丽娅； 张凤鸣； 都有为；

【Author】 Liu Xing-Chong a) , Lu Zhi-Hai b) , Lin Ying-Bin b) , Wang Jian-Feng b) , Lu Zhong-Linb) , Lu¨ Li-Ya b) , Zhang Feng-Ming b) , and Du You-Wei b) a) School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China b) Department of Physics, Nanjing University, Nanjing 210093, China

【机构】 School of Physical Electronics, University of Electronic Science and Technology of China； Department of Physics, Nanjing University；

【摘要】 This paper reports that polycrystalline Si 0.956 Mn 0.044 :B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization. The polycrystalline thin films were treated by hydrogen plasma excited with approach of radio-frequency plasma enhanced chemical vapour deposition for different time of 10 minutes, 15 minutes and 40 minutes. After hydrogenation, the structural properties of the films do not show any change, while both the saturation magnetization and the hole concentration in the films increase at first, then decrease with the increase of hydrogenation time. The obvious correlation between the magnetic properties and the transport properties of the polycrystalline Si 0.956 Mn 0.044 :B films suggests that a mechanism of hole-mediated ferromagnetism is believed to exist in Si-based diluted magnetic semiconductors.

【Abstract】 This paper reports that polycrystalline Si 0.956 Mn 0.044 :B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization. The polycrystalline thin films were treated by hydrogen plasma excited with approach of radio-frequency plasma enhanced chemical vapour deposition for different time of 10 minutes, 15 minutes and 40 minutes. After hydrogenation, the structural properties of the films do not show any change, while both the saturation magnetization and the hole concentration in the films increase at first, then decrease with the increase of hydrogenation time. The obvious correlation between the magnetic properties and the transport properties of the polycrystalline Si 0.956 Mn 0.044 :B films suggests that a mechanism of hole-mediated ferromagnetism is believed to exist in Si-based diluted magnetic semiconductors.

【关键词】 magnetic semiconductor； silicon； magnetism；
【Key words】 magnetic semiconductor； silicon； magnetism；
【基金】 supported by the National Key Program for Fundamental Research Development Plan of China (973 project)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2009年02期
  • 【分类号】TB383.2
  • 【下载频次】10
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