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Rectifying effect of heterojunction fabricated in freestanding thin film of polyaniline containing azobenzene side-chain

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【作者】 尹志华龙云泽黄琨万梅香陈兆甲

【Author】 Yin Zhi-Hua a),Long Yun-Ze a),Huang Kun b),Wan Mei-Xiang b),and Chen Zhao-Jia c) a)College of Physics Science,Qingdao University,Qingdao 266071,China b)Institute of Chemistry,Chinese Academy of Sciences,Beijing 100190,China c)Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

【机构】 College of Physics Science,Qingdao UniversityInstitute of Chemistry,Chinese Academy of SciencesInstitute of Physics,Chinese Academy of Sciences

【摘要】 An innovative heterojunction is fabricated between two sides of a freestanding thin film of HCl-doped polyaniline(PANI) derivative containing azobenzene side-chain,which is synthesized through an N-alkyl-substituted reaction.Of the film,the side with being irradiated by UV light during preparation is represented as ’A side’;the other side without being irradiated is represented as ’N side’.The electrical properties of the heterojunction are measured and the rectifying effect is observed in the current-voltage characteristic curves with the values of rectifying ratio(γ) being 20 at ±0.06 V at T = 77 K and 4 at ±0.02 V at T = 300 K separately.

【Abstract】 An innovative heterojunction is fabricated between two sides of a freestanding thin film of HCl-doped polyaniline(PANI) derivative containing azobenzene side-chain,which is synthesized through an N-alkyl-substituted reaction.Of the film,the side with being irradiated by UV light during preparation is represented as ’A side’;the other side without being irradiated is represented as ’N side’.The electrical properties of the heterojunction are measured and the rectifying effect is observed in the current-voltage characteristic curves with the values of rectifying ratio(γ) being 20 at ±0.06 V at T = 77 K and 4 at ±0.02 V at T = 300 K separately.

【基金】 Project supported by the National Natural Science Foundation of China (Grant No 10604038);the Program for New Century Excellent Talents in University,China (Grant No NCET-07-0472)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2009年01期
  • 【分类号】TN313.4
  • 【下载频次】34
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